CORRELATION BETWEEN BACKGROUND CARRIER CONCENTRATION AND X-RAY LINEWIDTH FOR INGAAS/INP GROWN BY VAPOR-PHASE EPITAXY

被引：16

作者：

MACRANDER, AT

CHU, SNG

STREGE, KE

BLOEMEKE, AF

JOHNSTON, WD

机构：

来源：

关键词：

D O I：

10.1063/1.94853

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：615 / 617

页数：3

共 8 条

[1] CHU SC, UNPUB
[2] FAKTOR MM, 1980, CURRENT TOPICS MAT S, V6, pCH1
[3] FORREST SR, 1982, FIBEROPT TECHNOL 81
[4] JOHNSTON WD, 1980, 38TH ANN IEEE DEV RE
[5] LATTICE MISMATCH STUDY OF LPE-GROWN INGAPAS ON (001)-INP USING X-RAY DOUBLE-CRYSTAL DIFFRACTION
MATSUI, J
ONABE, K
KAMEJIMA, T
HAYASHI, I
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (04) : 664 - 667
[6] MATSUSHIMA Y, 1982, GAINASP ALLOY SEMICO, pCH16
[7] MISORIENTATION AND TETRAGONAL DISTORTION IN HETEROEPITAXIAL VAPOR-GROWN III-V STRUCTURES
OLSEN, GH
SMITH, RT
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 31 (02): : 739 - 747
[8] OLSEN GH, 1982, GAINASP ALLOY SEMICO, P18