TUNGSTEN SILICIDE FILMS DEPOSITED BY SIH2CL2-WF6 CHEMICAL-REACTION

被引：18

作者：

HARA, T

MIYAMOTO, T

YOKOYAMA, T

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 04期

关键词：

D O I：

10.1149/1.2096848

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1177 / 1180

页数：4

共 9 条

[1]

Cullity B.D., 1978, ELEMENT XRAY DIFFRAC

[2] COMPOSITION OF CVD TUNGSTEN SILICIDES [J].

HARA, T ;

TAKAHASHI, H ;

ISHIZAWA, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (05) :1302-1306

[3]

HARA T, IN PRESS JPN J APPL

[4]

HARA T, 1984, JPN J APPL PHYS, V23, P455

[5]

PRICE JB, 1986, SEMICON WEST 0510

[6] PROPERTIES OF LOW-PRESSURE CVD TUNGSTEN SILICIDE FOR MOS VLSI INTERCONNECTIONS [J].

SARASWAT, KC ;

BRORS, DL ;

FAIR, JA ;

MONNIG, KA ;

BEYERS, R .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) :1497-1505

[7] ANALYSIS OF STRESS IN CHEMICAL VAPOR-DEPOSITION TUNGSTEN SILICIDE FILM [J].

SHIOYA, Y ;

ITOH, T ;

INOUE, SI ;

MAEDA, M .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) :4194-4199

[8]

Tamura H., 1987, Proceedings of the First International Symposium on Ultra Large Integration Science and Technology: ULSI Science and Technology/1987, P475

[9]

WU T, 1988, MAY WORKSH MET DIEL

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