ELECTRON FLYS EYE LENS ARTWORK CAMERA

被引：7

作者：

LEMMOND, CQ ^{[1
]}

BUSCHMAN.EC ^{[1
]}

KLOTZ, TH ^{[1
]}

WHITE, GM ^{[1
]}

机构：

[1] GE,CORP RES & DEV CTR,SCHENECTADY,NY 12301

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1974年 / ED21卷 / 09期

关键词：

D O I：

10.1109/T-ED.1974.17972

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：598 / 603

页数：6

共 18 条

[1]

ANGELLO SJ, 1970, IEEE T ELECTRON DEVI, VED17, P442

[2]

BREWER GR, 1971, IEEE SPECTRUM, V8, P23, DOI 10.1109/MSPEC.1971.5217844

[3] ELECTRON-SENSITIVE MATERIALS [J].

BROYDE, B .

BELL SYSTEM TECHNICAL JOURNAL, 1970, 49 (09) :2095-+

[4]

CHANG THP, 1969, 10TH P S EL ION LAS, P97

[5]

COLE HS, 1972, Patent No. 3703402

[6] HIGH-RESOLUTION POSITIVE RESISTS FOR ELECTRON-BEAM EXPOSURE [J].

HALLER, I ;

HATZAKIS, M ;

SRINIVASAN, R .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1968, 12 (03) :251-+

[7] FUNDAMENTAL ASPECTS OF ELECTRON-BEAM LITHOGRAPHY .1. DEPTH-DOSE RESPONSE OF POLYMERIC ELECTRON-BEAM RESISTS [J].

HEIDENREICH, RD ;

THOMPSON, LF ;

FEIT, ED ;

MELLIARS.CM .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) :4039-4047

[8]

HUGHES WC, 1969, 10 REC S EL ION LAS, P441

[9]

LIVESAY WR, 1971, 71C23ED IEEE CAT, P505

[10] ELECTRON BEAM FABRICATION OF MICRON TRANSISTORS [J].

MAGDO, S ;

HATZAKIS, M ;

TING, CH .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1971, 15 (06) :446-&

← 1 2 →