CHARACTERISTICS OF THE ELECTRON TRAPS PRODUCED BY ELECTRON-IRRADIATION IN N-TYPE GERMANIUM

被引：23

作者：

POULIN, F

BOURGOIN, JC

机构：

来源：

PHYSICAL REVIEW B | 1982年 / 26卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.26.6788

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6788 / 6794

页数：7

共 10 条

[1]

BOURGOIN JC, 1981, 1980 INT C DEF RAD E, P33

[2] RADIATION DEFECTS IN NORMAL-TYPE GERMANIUM STUDIED BY DEEP LEVEL TRANSIENT SPECTROSCOPY [J].

FUKUOKA, N ;

SAITO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (07) :L519-L522

[3] NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP [J].

HENRY, CH ;

LANG, DV .

PHYSICAL REVIEW B, 1977, 15 (02) :989-1016

[4] SELF-DIFFUSION ENTROPY IN SILICON [J].

LANNOO, M ;

BOURGOIN, JC .

SOLID STATE COMMUNICATIONS, 1979, 32 (11) :913-917

[5]

LANNOO M, 1981, POINT DEFECTS SEMICO, V1, pCH6

[6]

MASHOVETS TV, 1977, 1976 P INT C RAD EFF, P30

[7] ENERGY LEVELS IN ELECTRON IRRADIATED N-TYPE GERMANIUM. [J].

Mooney, P.M. ;

Cherki, M. ;

Bourgoin, J.C. .

1979, 40 (02) :l19-l22

[8] DETERMINATION OF THE FREE-ENERGY LEVEL OF DEEP CENTERS, WITH APPLICATION TO GAAS [J].

PONS, D .

APPLIED PHYSICS LETTERS, 1980, 37 (04) :413-415

[9] THRESHOLD ENERGY FOR ATOMIC DISPLACEMENT IN ELECTRON-IRRADIATED GERMANIUM [J].

POULIN, F ;

BOURGOIN, JC .

REVUE DE PHYSIQUE APPLIQUEE, 1980, 15 (01) :15-19

[10]

POULIN F, 1981, RECENT DEV CONDENSED, V3, P83

← 1 →