INTEGRATING TRANSISTORS ON HIGH-OHMIC SILICON

This paper presents a compatible technology for integrating both radiation detectors and transistors on the same high-ohmic silicon substrate. Using this technology, chips have been fabricated containing a number of test transistors (MOSFETs) with different geometries. Measurements on the devices showed a threshold voltage between 0 and -3 V, and a transconductance between 25 μA/V and 1.25 mA/V for aspect ratios between 0.7 and 50, respectively. The results demonstrate that transistors can be integrated together with radiation detectors onto one chip, which can lead to radiation detectors containing both detecting elements and signal-modification units, such as preamplifiers and multiplexers. © 1990.