PHOTOACTIVITY IN BISMUTH GERMANIUM OXIDE

[1] BALLMAN AA, 1967, J CRYST GROWTH, V1, P37

[2] ARTIFICIAL INITIATION OF LAYER-LIKE FIELD INHOMOGENEITIES IN CDS SINGLE CRYSTALS [J]. PHYSICA STATUS SOLIDI, 1964, 4 (02): : 237 - 249

[3] DOUGLAS GG, TO BE PUBLISHED

[4] FLUGGE S, 1961, HANDBUCH PHYSIK 1 ED, V25

[5] OPTICAL ACTIVITY AND ELECTROOPTIC EFFECT IN BISMUTH GERMANIUM OXIDE (BI12GEO20) [J]. APPLIED OPTICS, 1966, 5 (10): : 1688 - &

[6] ELECTRICAL TRANSIENTS IN HIGH RESISTIVITY GALLIUM ARSENIDE [J]. SOLID-STATE ELECTRONICS, 1964, 7 (01) : 17 - &

[7] NYE JF, 1960, PHYSICAL PROPERTIES, P266

[8] POSSIBILITY OF NEGATIVE RESISTANCE EFFECTS IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 78 (500): : 293 - &

[9] ULTRASONIC PROPERTIES OF BISMUTH GERMANIUM OXIDE [J]. APPLIED PHYSICS LETTERS, 1966, 9 (08) : 290 - &

[10] WARNER AW, TO BE PUBLISHED

[1] BALLMAN AA, 1967, J CRYST GROWTH, V1, P37

[2] ARTIFICIAL INITIATION OF LAYER-LIKE FIELD INHOMOGENEITIES IN CDS SINGLE CRYSTALS [J]. PHYSICA STATUS SOLIDI, 1964, 4 (02): : 237 - 249

[3] DOUGLAS GG, TO BE PUBLISHED

[4] FLUGGE S, 1961, HANDBUCH PHYSIK 1 ED, V25

[5] OPTICAL ACTIVITY AND ELECTROOPTIC EFFECT IN BISMUTH GERMANIUM OXIDE (BI12GEO20) [J]. APPLIED OPTICS, 1966, 5 (10): : 1688 - &

[6] ELECTRICAL TRANSIENTS IN HIGH RESISTIVITY GALLIUM ARSENIDE [J]. SOLID-STATE ELECTRONICS, 1964, 7 (01) : 17 - &

[7] NYE JF, 1960, PHYSICAL PROPERTIES, P266

[8] POSSIBILITY OF NEGATIVE RESISTANCE EFFECTS IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 78 (500): : 293 - &

[9] ULTRASONIC PROPERTIES OF BISMUTH GERMANIUM OXIDE [J]. APPLIED PHYSICS LETTERS, 1966, 9 (08) : 290 - &

[10] WARNER AW, TO BE PUBLISHED