PREPARATION OF MO/SI SCHOTTKY BARRIERS BY CHEMICAL VAPOR-DEPOSITION OF MOLYBDENUM ONTO EPITAXIAL SILICON SUBSTRATES

被引：8

作者：

SIMEONOV, SS

KAFEDJIISKA, EI

GUERASSIMOV, AL

机构：

来源：

THIN SOLID FILMS | 1984年 / 115卷 / 04期

关键词：

D O I：

10.1016/0040-6090(84)90092-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：291 / 298

页数：8

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