HIGH-CONTRAST ELECTRON-TRANSFER GAAS-ALGAAS MULTIPLE-QUANTUM-WELL WAVE-GUIDE MODULATOR

被引：5

作者：

BLUM, O ^{[1
]}

ZUCKER, JE ^{[1
]}

CHANG, TY ^{[1
]}

SAUER, NJ ^{[1
]}

DIVINO, M ^{[1
]}

JONES, KL ^{[1
]}

GUSTAFSON, TK ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 04期

关键词：

D O I：

10.1109/68.82101

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the first GaAs-AlGaAs multiple-quantum-well electron transfer waveguide modulator. On-off ratios as high as 75:1 are obtained at 864.5 nm for an applied voltage of -5 to 10 V. We show that the wavelength and voltage characteristics of the device can be successfully interpreted in terms of the calculated energy band diagram.

引用

收藏

页码：327 / 329

页数：3

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