THIN OXIDE CHARGING CURRENT DURING PLASMA-ETCHING OF ALUMINUM

被引：87

作者：

SHIN, H ^{[1
]}

KING, CC ^{[1
]}

HORIUCHI, T ^{[1
]}

HU, CM ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 08期

关键词：

D O I：

10.1109/55.119146

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

CV measurement is shown to be a more sensitive technique for characterizing plasma-etching induced damage than oxide breakdown. Plasma charging current was deduced by reproducing the CV degradation by constant current stressing. The charging current is found to increase in proportion to the periphery rather than to the area of the "antenna."

引用

页码：404 / 406

页数：3