EFFECTS OF SOME ADDITIVES ON THERMOELECTRIC PROPERTIES OF FESI2 THIN-FILMS

被引：74

作者：

KOMABAYASHI, M ^{[1
]}

HIJIKATA, K ^{[1
]}

IDO, S ^{[1
]}

机构：

[1] SAITAMA UNIV,FAC ENGN,DEPT ELECT ENGN,URAWA,SAITAMA 338,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 02期

关键词：

FESI2 THIN FILM; THERMOELECTRIC PROPERTY; RF-SPUTTERING; EFFECTS OF ADDITIVES; ACTIVATION ENERGY;

D O I：

10.1143/JJAP.30.331

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Effects of some additives (V, Cr, Mn, Co, Ni, Pd, Pt) on thermoelectric properties of FeSi2 thin films were studied. V, Cr or Mn-doped FeSi2 films were of p-type semiconductor and Co, Ni, Pd and Pt-doped FeSi2 films of n-type semiconductor. It was indicated that V or Cr are more suitable additives in thermoelectric properties of p-type FeSi2 than Mn and that Pt is superior to other additives in thermoelectric properties of n-type FeSi2.

引用

页码：331 / 334

页数：4

共 8 条

[1] MECHANISM OF ELECTRICAL CONDUCTION IN BETA-FESI2 [J].

BIRKHOLZ, U ;

SCHELM, J .

PHYSICA STATUS SOLIDI, 1968, 27 (01) :413-&

[2]

Dusausoy P Y., 1971, ACTA CRYSTALLOGR B, V27, P1209, DOI [10.1107/S0567740871003765, DOI 10.1107/S0567740871003765]

[3] STUDY ON THE FORMATION OF FE1-XMNXSI2 FROM THE SINTERED FESI-FE2SI5 EUTECTIC ALLOY DOPED WITH MANGANESE [J].

KOJIMA, T ;

SAKATA, M ;

NISHIDA, I .

JOURNAL OF THE LESS-COMMON METALS, 1990, 162 (01) :39-49

[4] SEMICONDUCTING AND THERMOELECTRIC PROPERTIES OF SINTERED IRON DISILICIDE [J].

KOJIMA, T .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 111 (01) :233-242

[5] THE COMPOSITION DEPENDENCE OF SOME ELECTRICAL-PROPERTIES OF FESIX THIN-FILMS [J].

KOMABAYASHI, M ;

HIJIKATA, K ;

IDO, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (06) :1118-1121

[6] STUDY OF SEMICONDUCTOR-TO-METAL TRANSITION IN MN-DOPED FESI2 [J].

NISHIDA, I .

PHYSICAL REVIEW B, 1973, 7 (06) :2710-2713

[7]

[No title captured]

[8]

[No title captured]

← 1 →