FABRICATION OF HIGH SENSITIVITY THIN-FILM INDIUM-ANTIMONIDE MAGNETORESISTORS

被引:11
作者
NADKARNI, GS
SIMONI, A
SIMMONS, JG
机构
[1] PRECISION ELECTR COMPONENTS LTD,TORONTO,ONTARIO,CANADA
[2] UNIV TORONTO,ELECT ENGN DEPT,TORONTO,ONTARIO,CANADA
关键词
D O I
10.1016/0038-1101(75)90040-4
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:393 / 397
页数:5
相关论文
共 9 条
[1]   PREPARATION OF HIGH MOBILITY INSB THIN FILMS [J].
CARROLL, JA ;
SPIVAK, JF .
SOLID-STATE ELECTRONICS, 1966, 9 (05) :383-&
[2]  
KATAOKA S, 1970, SOLID STATE SENSOR S, P56
[3]  
KATAOKA S, 1964, P I ELECTR ENG, V111, P1937
[4]   SINGLE CRYSTAL INSB THIN FILMS BY ELECTRON BEAM RE-CRYSTALLIZATION [J].
TEEDE, NF .
SOLID-STATE ELECTRONICS, 1967, 10 (11) :1069-&
[5]  
WEIDER HH, 1969, J APPL PHYS, V40, P3320
[6]   GALVANOMAGNETIC PROPERTIES OF RECRYSTALLIZED DENDRITIC INSB FILMS [J].
WIEDER, HH .
SOLID-STATE ELECTRONICS, 1966, 9 (05) :373-&
[7]   HIGH MOBILITY THIN FILMS OF INDIUM ANTIMONIDE VACUUM DEPOSITED ON TO A COLD SUBSTRATE [J].
WILLIAMSON, WJ .
SOLID-STATE ELECTRONICS, 1966, 9 (03) :213-+
[8]  
WILSON AH, 1953, THEORY METALS, P235
[9]   MAGNETORESISTIVE TRANSDUCER [J].
YUAN, LT .
SOLID-STATE ELECTRONICS, 1966, 9 (05) :497-&