TRAPPING OF INJECTED MINORITY-CARRIERS BY REDOX REAGENTS IN THE DARK AND FERMI LEVEL UNPINNING AT THE NORMAL-MOSE/ELECTROLYTE INTERFACE

被引：5

作者：

ETMAN, M

机构：

来源：

JOURNAL OF ELECTROANALYTICAL CHEMISTRY | 1985年 / 183卷 / 1-2期

关键词：

D O I：

10.1016/0368-1874(85)85507-6

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

收藏

页码：401 / 405

页数：5

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共 7 条

[1] THE RESPONSE OF THE N-MOSE2/L-M H2SO4 INTERFACE TO PHOTOINDUCED HOLES AT LOW AND HIGH LIGHT INTENSITIES IN THE ABSENCE AND PRESENCE OF FE(CN)64- SPECIES
ETMAN, M
LEVY, F
[J]. JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1985, 183 (1-2): : 395 - 399
[2] ETMAN M, 1984, WORKSHOP PHOTOELECTR
[3] ETMAN M, UNPUB J ELECTROCHEM
[4] ETMAN M, UNPUB
[5] GERISCHER H, 1981, 1980 P NATO ADV STUD, P223
[6] FORMATION OF AN INVERSION LAYER IN N-TYPE MOSE2 ELECTRODES - OBSERVATION IN THE PRESENCE OF HIGHLY OXIDIZING REDOX SYSTEMS
JAEGER, CD
GERISCHER, H
KAUTEK, W
[J]. BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1982, 86 (01): : 20 - 25
[7] ANALYSIS OF CHARGE-TRANSFER AT PHOTOEXCITED CDS ELECTRODES WITH NA2S IN THE ELECTROLYTE
WILSON, RH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (07) : 1187 - 1188