P -] P-LIKE TRANSITIONS AT THE SILICON L2,3-EDGES OF SILICATES

被引:44
作者
HANSEN, PL
BRYDSON, R
MCCOMB, DW
机构
[1] TECH UNIV DENMARK,APPL PHYS LAB,DK-2800 LYNGBY,DENMARK
[2] UNIV OXFORD,DEPT MAT,OXFORD OX1 3PH,ENGLAND
[3] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND
来源
MICROSCOPY MICROANALYSIS MICROSTRUCTURES | 1992年 / 3卷 / 2-3期
关键词
D O I
10.1051/mmm:0199200302-3021300
中图分类号
TH742 [显微镜];
学科分类号
摘要
We provide evidence for the existence of p --> p-like transitions at the silicon L2,3-edges of common silicates. This arises due to the local, tetrahedral potential at the silicon site imposed by the nearest neighbour atoms leading to a loss of inversion symmetry. In order to successfully describe the resultant electron energy loss near-edge structure (ELNES) in such environments, we show that the consideration of such effects is extremely important.
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页码:213 / 219
页数:7
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