LIQUID-PHASE EPITAXIAL-GROWTH CONDITIONS OF LATTICE-MATCHED AL0.48IN0.52AS AND ALXGAYIN1-X-YAS LAYERS WITHOUT SURFACE-DEFECTS

被引：7

作者：

NAKAJIMA, K

TANAHASHI, T

KOMIYA, S

AKITA, K

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1983年 / 130卷 / 09期

关键词：

D O I：

10.1149/1.2120125

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1927 / 1933

页数：7

共 19 条

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[6]

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APPLIED PHYSICS LETTERS, 1982, 41 (02) :194-196

[9] PHASE-DIAGRAM OF IN-GA-AS-P-QUATERNARY SYSTEM AND LPE GROWTH-CONDITIONS FOR LATTICE MATCHING ON INP SUBSTRATES [J].

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (01) :123-127

[10] LIQUID-PHASE EPITAXIAL-GROWTH OF HIGH-PURITY IN1-XGAXAS AND INP ON (100) AND (111)B FACES [J].

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