THE RESIDUE PHENOMENON IN THE ANISOTROPIC DRY ETCHING OF CONDUCTIVE FILMS DEPOSITED ON TOPOGRAPHIC STEPS

被引：7

作者：

MAA, JS

HALON, B

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 04期

关键词：

D O I：

10.1116/1.583519

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：822 / 828

页数：7

共 9 条

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[8] PHOSPHORUS OUT DIFFUSION FROM DOUBLE-LAYERED TANTALUM SILICIDE POLYCRYSTALLINE SILICON STRUCTURE [J].

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