PASSIVATION OF GAAS BY ATOMIC-HYDROGEN FLOW PRODUCED BY THE CROSSED BEAMS METHOD

被引：14

作者：

BALMASHNOV, AA

GOLOVANIVSKY, KS

OMELJANOVSKY, EM

PAKHOMOV, AV

POLYAKOV, AY

机构：

[1] People's Friendship University, Moscow 117198, M Maklay st.

[2] State Institute of Rare Metals, Moscow 109017

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1990年 / 5卷 / 03期

关键词：

D O I：

10.1088/0268-1242/5/3/010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new method of hydrogen passivation is described in which a flow of molecular hydrogen is passed through dense microwave plasma across a magnetic field. This magnetic field serves to protect the sample surface from being bombarded by charged particles. Hence the crossed beam (CB) method makes it possible to avoid plasma etching and heavy ion bombardment that are so detrimental for many semiconductor devices. The positive effect of CB treatment on n-GaAs Schottky diodes is described. The effect consists of shallow donor passivation and improvement of I-V characteristics.

引用

页码：242 / 245

页数：4

共 20 条

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