DC RESISTIVITY VARIATION OF COLD-DEPOSITED SILVER FILMS DURING GAS EXPOSURE

被引：28

作者：

HOLZAPFEL, C

STUBENRAUCH, F

SCHUMACHER, D

OTTO, A

机构：

[1] IPkM, Heinrich-Heine-Universität Düsseldorf

来源：

THIN SOLID FILMS | 1990年 / 188卷 / 01期

关键词：

D O I：

10.1016/0040-6090(90)90188-J

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Surprisingly, the adsorption of ethylene and pyridine on cold-deposited silver films causes a decrease in the resistivity R whereas the adsorption of CH4 and C2H6 makes R increase. This is explained by an increase or decrease in the electron tunnelling rate at "tunnelling sites" in "porous grain boundaries", if the adsorbates have or do not have respectively π* orbitals. The relatively strong increase in R by oxygen adsorption is explained by the oxidation of the tunnelling sites. © 1990.

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页码：7 / 19

页数：13

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