PHOTOASSISTED GROWTH OF II-VI SEMICONDUCTOR-FILMS

Photoassisted growth of II-VI semiconductor films in MOVPE, MBE, and MOMBE has been found to be promising for high quality epilayers and effective doping, despite the different growth techniques. Association of electrons and/or holes generated at the growth surface under above band gap photoirradiation seems to be a fundamental process responsible to many of the unique features. For the application of II-VI semiconductors to various optoelectronic devices from far infrared to ultraviolet spectral regions, the photoassisted growth may be one of the key techniques.