EFFECT OF PRESSURE ON THE METAL-INSULATOR-TRANSITION TEMPERATURE IN THIOSPINEL CUIR2S4

被引：51

作者：

OOMI, G ^{[1
]}

KAGAYAMA, T ^{[1
]}

YOSHIDA, I ^{[1
]}

HAGINO, T ^{[1
]}

NAGATA, S ^{[1
]}

机构：

[1] MURORAN INST TECHNOL,DEPT MAT SCI & ENGN,MURORAN,HOKKAIDO 050,JAPAN

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1995年 / 140卷

关键词：

D O I：

10.1016/0304-8853(94)01127-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electrical resistance of the thiospinel CuIr2S4 has been measured to clarify the pressure dependence of the metal-insulator transition temperature T-M-I. It is found that T-M-I increases with increasing pressure with a rate of dT(M-I)/dp = 2.8 K/kbar and the transition becomes less prominent at high pressure.

引用

页码：157 / 158

页数：2

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