SOME ASPECTS OF DAMAGE MODELS

被引：15

作者：

NAKAGAWA, T

OSAKI, S

机构：

[1] SYRACUSE UNIV,DEPT IND ENGN & OPERATIONS RES,NEW YORK,NY 13210

[2] HIROSHIMA UNIV,DEPT IND ENGN,HIROSHIMA 730,JAPAN

来源：

MICROELECTRONICS AND RELIABILITY | 1974年 / 13卷 / 04期

关键词：

D O I：

10.1016/0026-2714(74)90103-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：253 / 257

页数：5

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