LASER-INDUCED LOCAL ETCHING OF GALLIUM-ARSENIDE IN GAS ATMOSPHERE

被引：16

作者：

TAKAI, M

TOKUDA, J

NAKAI, H

GAMO, K

NAMBA, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 12期

关键词：

D O I：

10.1143/JJAP.22.L757

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L757 / L759

页数：3

共 8 条

[1] LASER-INDUCED CHEMICAL VAPOR-DEPOSITION OF POLYCRYSTALLINE SI FROM SICL4 [J].

BARANAUSKAS, V ;

MAMMANA, CIZ ;

KLINGER, RE ;

GREENE, JE .

APPLIED PHYSICS LETTERS, 1980, 36 (11) :930-932

[2] CHEMICAL VAPOR-DEPOSITION OF SILICON USING A CO2-LASER [J].

CHRISTENSEN, CP ;

LAKIN, KM .

APPLIED PHYSICS LETTERS, 1978, 32 (04) :254-256

[3] LASER-INDUCED MICROSCOPIC ETCHING OF GAAS AND INP [J].

EHRLICH, DJ ;

OSGOOD, RM ;

DEUTSCH, TF .

APPLIED PHYSICS LETTERS, 1980, 36 (08) :698-700

[4] LASER MICROPHOTOCHEMISTRY FOR USE IN SOLID-STATE ELECTRONICS [J].

EHRLICH, DJ ;

OSGOOD, RM ;

DEUTSCH, TF .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (11) :1233-1243

[5] LASER-INDUCED VAPOR-DEPOSITION OF SILICON [J].

HANABUSA, M ;

NAMIKI, A ;

YOSHIHARA, K .

APPLIED PHYSICS LETTERS, 1979, 35 (08) :626-627

[6] LASER-INDUCED CHEMICAL VAPOR-DEPOSITION OF CARBON [J].

LEYENDECKER, G ;

BAUERLE, D ;

GEITTNER, P ;

LYDTIN, H .

APPLIED PHYSICS LETTERS, 1981, 39 (11) :921-923

[7] LASER CHEMICAL ETCHING OF VIAS IN GAAS [J].

TUCKER, AW ;

BIRNBAUM, M .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (02) :39-41

[8] LASER ENHANCED ETCHING IN KOH [J].

VONGUTFELD, RJ ;

HODGSON, RT .

APPLIED PHYSICS LETTERS, 1982, 40 (04) :352-354

← 1 →