ELECTRON-MOBILITY AND STATIC DIELECTRIC-CONSTANT OF CD3AS2 AT 4.2K

被引：41

作者：

JAYGERIN, JP ^{[1
]}

AUBIN, MJ ^{[1
]}

CARON, LG ^{[1
]}

机构：

[1] UNIV SHERBROOKE,DEPT PHYS,RECH SEMICONDUCTEURS & DIELECT GRP,SHERBROOKE J1K 2R1,QUEBEC,CANADA

来源：

SOLID STATE COMMUNICATIONS | 1977年 / 21卷 / 08期

关键词：

D O I：

10.1016/0038-1098(77)91149-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：771 / 774

页数：4

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[4]

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[5] ELECTRON-MOBILITY IN CD3AS2 AT 4.2K [J].

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[7]

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[8] ON PREPARATION, GROWTH AND PROPERTIES OF CD3AS2 [J].

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[9] GALVANOMAGNETIC EFFECTS IN SINGLE CRYSTALS OF CADMIUM ARSENIDE [J].

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[10]

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