EFFECT OF OXYGEN VACANCIES ON ELECTRONIC STATES OF CAVO3-DELTA AND SRVO3-DELTA - A PHOTOEMISSION-STUDY

被引:34
作者
AIURA, Y
IGA, F
NISHIHARA, Y
OHNUKI, H
KATO, H
机构
[1] TOKYO UNIV MERCANTILE MARINE,DEPT PHYS,KOTO KU,TOKYO 135,JAPAN
[2] NATL LAB HIGH ENERGY PHYS,PHOTON FACTORY,TSUKUBA,IBARAKI 305,JAPAN
来源
PHYSICAL REVIEW B | 1993年 / 47卷 / 11期
关键词
D O I
10.1103/PhysRevB.47.6732
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
There are two structures in the photoemission spectra of CaVO3-delta and SrVO3-delta, in the d-band region. One peak is within approximately 1 eV of the Fermi level and has a sharp Fermi cutoff. The other is a broad peak centered at approximately 1.6 eV. From our photoemission spectra of CaVO3-delta and SrVO3-delta both with oxygen vacancies (delta = approximately 0.1) and without vacancies (delta = 0), it is shown that the relative intensity of the peak near the Fermi level for CaVO3-delta drastically decreases with decreasing oxygen vacancy concentration (delta). In contrast, no such drastic change in intensity is observed for SrVO3-delta. This difference in the effect of oxygen vacancies between SrVO3-delta and CaVO3-delta reflects the fact that a metal-insulator phase transition induced by bulk oxygen vacancies takes place in CaVO3-delta but not in SrVO3-delta.
引用
收藏
页码:6732 / 6735
页数:4
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