LINEAR, ELECTRONICALLY TUNABLE RESISTOR

被引：7

作者：

TSIVIDIS, Y

VAVELIDIS, K

机构：

[1] Division of Computer Science, Department of Electrical and Computer Engineering, National Technical University of Athens, Zografou 15773, Athens

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 25期

关键词：

RESISTORS; FIELD-EFFECT TRANSISTORS; INTEGRATED CIRCUITS;

D O I：

10.1049/el:19921482

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A technique for converting a MOSFET into a highly linear, electronically tunable resistor is described. The key to the linearisation achieved is the application of voltages across the gate and across the body, in such a way that the gate-channel and body-channel potentials remain constant all along the channel. Measurements show distortion levels of less than -75 dB for signal amplitudes of 6 V peak to peak.

引用

页码：2303 / 2305

页数：3