PROPANE - HYDROGEN MORIE OF GAAS

被引：2

作者：

LAW, VJ

JONES, GAC

TEWORDT, M

机构：

[1] Cavendish Lab., Cambridge Univ.

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1990年 / 5卷 / 09期

关键词：

D O I：

10.1088/0268-1242/5/9/015

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Metal-organic reactive ion etching of GaAs and related III-V semiconductor materials, using an RF plasma containing a mixture of C3H 8:H2 is described. The kinetic properties of the process are compared with CH4:H2 and C2H 6:H2 etching of GaAs. Results indicate that when the H2 flow dependency is optimised, C3H8:H 2 produces between 20-38 nm min-1 GaAs etch rates, with a reactivity of 2.5 greater than CH4:H2 RF plasmas.

引用

页码：1001 / 1003

页数：3

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