OPTICAL SPECTROSCOPY OF A GAAS/ALGAAS QUANTUM-WIRE STRUCTURE USING NEAR-FIELD SCANNING OPTICAL MICROSCOPY

被引:143
作者
GROBER, RD
HARRIS, TD
TRAUTMAN, JK
BETZIG, E
WEGSCHEIDER, W
PFEIFFER, L
WEST, K
机构
[1] ATandT Bell Laboratories, Murray Hill, NJ 07974
关键词
D O I
10.1063/1.111903
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report the first spectroscopic study using a low temperature near-field scanning optical microscope. We have studied an array of GaAs/AlGaAs cleaved edge overgrowth quantum wires. The three luminescence peaks originate from different structures in the sample: The (001)-oriented multiple quantum wells, the (110)-oriented single quantum well, and the quantum wires. The linewidth of the quantum wire emission is related to roughness in the (110)-oriented single quantum well. Quenching of the multiple quantum wells and single quantum well emission near the quantum wires is attributed to diffusion of photoexcited carriers into the wires.
引用
收藏
页码:1421 / 1423
页数:3
相关论文
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