TEMPERATURE-DEPENDENCE OF SCHOTTKY VERSUS BACKWARD DIODES FOR RADIOMETRY APPLICATIONS

被引：2

作者：

DEMAAGT, PJ

BUSS, TF

VANDEROER, TG

机构：

[1] Eindhoven University of Technology, Eindhoven, 5600 MB

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 1992年 / 5卷 / 07期

关键词：

SQUARE-LAW DETECTION; RADIOMETRY; SCHOTTKY DIODE; TUNNEL DIODE; BACKWARD DIODE;

D O I：

10.1002/mop.4650050702

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this article the temperature behavior of Schottky and backward diodes operating as square-law detectors at microwave frequencies is presented. To make a quantitative comparison between both diodes possible, the most important diode parameters are discussed. The criteria for comparison are the voltage sensitivity and the video resistance.

引用

页码：295 / 299

页数：5

共 7 条

[1]

Schottky W., Halbleitertheorie der Sperrschicht, Naturwissenschaften, 26, (1938)

[2]

Esaki L., New Phenomenon in Narrow Germanium P‐N Junctions, Phys. Rev., 109, (1958)

[3]

Sze S.M., Physics of Semiconductor Devices, (1981)

[4]

Demassa T.A., Knott D.P., The Prediction of Tunnel Diode‐Current Characteristics, Solid State Electron., 13, (1970)

[5]

Blakemore J.S., Semiconductor Statistics, (1961)

[6]

Kane E.O., Theory of Tunneling, J. Appl. Phys., 32, (1961)

[7]

Howes M.J., Morgan D.V., Variable Impedance Devices, (1978)

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