ATOMIC HYDROGEN-INDUCED DEGRADATION OF THE SI/SIO2 STRUCTURE

被引：81

作者：

CARTIER, E

STATHIS, JH

机构：

[1] IBM Research Division, T.J.Watson Research Center, Yorktown Heights

来源：

MICROELECTRONIC ENGINEERING | 1995年 / 28卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(95)00004-R

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

At ambient temperature, atomic hydrogen from a remote plasma produces large numbers of interface states which are not due to silicon dangling bonds. The release of atomic hydrogen by hot electrons or by radiation during device operation will inevitably lead to device degradation.

引用

页码：3 / 10

页数：8

共 11 条

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