A STUDY OF BUILT-IN POTENTIAL IN ALPHA-SI SOLAR-CELLS BY MEANS OF BACK-SURFACE REFLECTED ELECTRO-ABSORPTION

被引：31

作者：

NONOMURA, S

OKAMOTO, H

HAMAKAWA, Y

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1983年 / 32卷 / 01期

关键词：

D O I：

10.1007/BF00626131

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：31 / 38

页数：8

共 12 条

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[6] KOMURO S, UNPUB APPL PHYS LETT
[7] Nakamura G., 1982, Japanese Journal of Applied Physics, Supplement, V21, P297
[8] DETERMINATION OF THE BUILT-IN POTENTIAL IN A-SI SOLAR-CELLS BY MEANS OF ELECTRO-ABSORPTION METHOD
NONOMURA, S
OKAMOTO, H
HAMAKAWA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (08): : L464 - L466
[9] Nonomura S., 1982, Japanese Journal of Applied Physics, Supplement, V21, P279
[10] DRIFT TYPE PHOTO-VOLTAIC EFFECT IN A-SI P-I-N JUNCTION
OKAMOTO, H
YAMAGUCHI, T
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HAMAKAWA, Y
[J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 507 - 510