INVESTIGATION OF MOLECULAR-BEAM EPITAXIAL IN0.53GA0.47AS REGROWN ON LIQUID-PHASE EPITAXIAL IN0.53GA0.47AS/INP

被引：16

作者：

NASHIMOTO, Y

DHAR, S

HONG, WP

CHIN, A

BERGER, P

BHATTACHARYA, PK

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 02期

关键词：

D O I：

10.1116/1.583423

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：540 / 542

页数：3

共 9 条

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[2] NEW LONG WAVELENGTH AL0.48IN0.52AS/GA0.47IN0.53AS AVALANCHE PHOTO-DIODE GROWN BY MOLECULAR-BEAM EPITAXY [J].

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[4] DEEP LEVELS IN IN0.53GA0.47AS/INP HETEROSTRUCTURES [J].

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[5]

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[6] CARRIER COMPENSATION AT INTERFACES FORMED BY MOLECULAR-BEAM EPITAXY [J].

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WOOD, CEC ;

EASTMAN, LF .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) :6208-6213

[7] HIGH MOBILITY GAINAS THIN-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

MIZUTANI, T ;

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JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (02) :L119-L121

[8]

PEARSALL TP, 1983, IEEE ELECTR DEVICE L, V4, P5, DOI 10.1109/EDL.1983.25625

[9] OPTICAL-QUALITY GAINAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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OHNO, H ;

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JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (02) :435-440

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