学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
AVALANCHE BUILDUP TIME OF SILICON AVALANCHE PHOTODIODES
被引:22
作者
:
KANEDA, T
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS,NAKAHARA,KAWASAKI,JAPAN
FUJITSU LABS,NAKAHARA,KAWASAKI,JAPAN
KANEDA, T
[
1
]
TAKANASHI, H
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS,NAKAHARA,KAWASAKI,JAPAN
FUJITSU LABS,NAKAHARA,KAWASAKI,JAPAN
TAKANASHI, H
[
1
]
机构
:
[1]
FUJITSU LABS,NAKAHARA,KAWASAKI,JAPAN
来源
:
APPLIED PHYSICS LETTERS
|
1975年
/ 26卷
/ 11期
关键词
:
D O I
:
10.1063/1.88010
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:642 / 644
页数:3
相关论文
共 6 条
[1]
FREQUENCY RESPONSE OF AVALANCHING PHOTODIODES
EMMONS, RB
论文数:
0
引用数:
0
h-index:
0
EMMONS, RB
LUCOVSKY, G
论文数:
0
引用数:
0
h-index:
0
LUCOVSKY, G
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1966,
ED13
(03)
: 297
-
+
[2]
AVALANCHE BUILT-UP TIME OF GERMANIUM AVALANCHE PHOTODIODE
KANEDA, T
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS, HYOGO, KOBE, JAPAN
FUJITSU LABS, HYOGO, KOBE, JAPAN
KANEDA, T
TAKANASHI, H
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS, HYOGO, KOBE, JAPAN
FUJITSU LABS, HYOGO, KOBE, JAPAN
TAKANASHI, H
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1973,
12
(07)
: 1091
-
1092
[3]
QUASISTATIC APPROXIMATION FOR SEMICONDUCTOR AVALANCHES
KUVAS, R
论文数:
0
引用数:
0
h-index:
0
KUVAS, R
LEE, CA
论文数:
0
引用数:
0
h-index:
0
LEE, CA
[J].
JOURNAL OF APPLIED PHYSICS,
1970,
41
(04)
: 1743
-
&
[4]
TIME DEPENDENCE OF AVALANCHE PROCESSES IN SILICON
LEE, CA
论文数:
0
引用数:
0
h-index:
0
LEE, CA
BATDORF, RL
论文数:
0
引用数:
0
h-index:
0
BATDORF, RL
WIEGMANN, W
论文数:
0
引用数:
0
h-index:
0
WIEGMANN, W
KAMINSKY, G
论文数:
0
引用数:
0
h-index:
0
KAMINSKY, G
[J].
JOURNAL OF APPLIED PHYSICS,
1967,
38
(07)
: 2787
-
&
[5]
A PROPOSED HIGH-FREQUENCY, NEGATIVE-RESISTANCE DIODE
READ, WT
论文数:
0
引用数:
0
h-index:
0
READ, WT
[J].
BELL SYSTEM TECHNICAL JOURNAL,
1958,
37
(02):
: 401
-
446
[6]
WEBB PP, 1974, RCA REV, V35, P234
←
1
→
共 6 条
[1]
FREQUENCY RESPONSE OF AVALANCHING PHOTODIODES
EMMONS, RB
论文数:
0
引用数:
0
h-index:
0
EMMONS, RB
LUCOVSKY, G
论文数:
0
引用数:
0
h-index:
0
LUCOVSKY, G
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1966,
ED13
(03)
: 297
-
+
[2]
AVALANCHE BUILT-UP TIME OF GERMANIUM AVALANCHE PHOTODIODE
KANEDA, T
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS, HYOGO, KOBE, JAPAN
FUJITSU LABS, HYOGO, KOBE, JAPAN
KANEDA, T
TAKANASHI, H
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS, HYOGO, KOBE, JAPAN
FUJITSU LABS, HYOGO, KOBE, JAPAN
TAKANASHI, H
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1973,
12
(07)
: 1091
-
1092
[3]
QUASISTATIC APPROXIMATION FOR SEMICONDUCTOR AVALANCHES
KUVAS, R
论文数:
0
引用数:
0
h-index:
0
KUVAS, R
LEE, CA
论文数:
0
引用数:
0
h-index:
0
LEE, CA
[J].
JOURNAL OF APPLIED PHYSICS,
1970,
41
(04)
: 1743
-
&
[4]
TIME DEPENDENCE OF AVALANCHE PROCESSES IN SILICON
LEE, CA
论文数:
0
引用数:
0
h-index:
0
LEE, CA
BATDORF, RL
论文数:
0
引用数:
0
h-index:
0
BATDORF, RL
WIEGMANN, W
论文数:
0
引用数:
0
h-index:
0
WIEGMANN, W
KAMINSKY, G
论文数:
0
引用数:
0
h-index:
0
KAMINSKY, G
[J].
JOURNAL OF APPLIED PHYSICS,
1967,
38
(07)
: 2787
-
&
[5]
A PROPOSED HIGH-FREQUENCY, NEGATIVE-RESISTANCE DIODE
READ, WT
论文数:
0
引用数:
0
h-index:
0
READ, WT
[J].
BELL SYSTEM TECHNICAL JOURNAL,
1958,
37
(02):
: 401
-
446
[6]
WEBB PP, 1974, RCA REV, V35, P234
←
1
→