DC HOLDING AND DYNAMIC TRIGGERING CHARACTERISTICS OF BULK CMOS LATCHUP

被引：31

作者：

RUNG, RD ^{[1
]}

MOMOSE, H ^{[1
]}

机构：

[1] TOSHIBA CORP,SEMICOND DEVICE ENGN LAB,KAWASAKI 210,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 12期

关键词：

D O I：

10.1109/T-ED.1983.21426

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1647 / 1655

页数：9

共 13 条

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[4]

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[5]

ESTREICH DB, 1980, G2019 STANF EL LABS

[6] LATCH-UP IN CMOS INTEGRATED-CIRCUITS [J].

GREGORY, BL ;

SHAFER, BD .

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[7] A DISCUSSION OF THE ROLE OF DISTRIBUTED EFFECTS IN LATCH-UP [J].

OCHOA, A ;

DRESSENDORFER, PV .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) :4292-4294

[8] LATCH-UP CONTROL IN CMOS INTEGRATED-CIRCUITS [J].

OCHOA, A ;

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ESTREICH, D .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1979, 26 (06) :5065-5068

[9]

Payne R. S., 1980, International Electron Devices Meeting. Technical Digest, P248

[10]

Raburn W. D., 1980, International Electron Devices Meeting. Technical Digest, P252

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