ELECTRICAL STUDY OF THIN SIO2 LAYERS OBTAINED BY ANODIC-OXIDATION OF P-TYPE SILICON IN PURE WATER USING I-U, C-U, AND G-U MEASUREMENTS

被引：5

作者：

MORFOULI, P

PANANAKAKIS, G

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1989年 / 111卷 / 02期

关键词：

D O I：

10.1002/pssa.2211110218

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：529 / 539

页数：11

共 20 条

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