LONG-RANGE FINNIS SINCLAIR POTENTIALS

被引：1107

作者：

SUTTON, AP

CHEN, J

机构：

[1] Department of Metallurgy and Science of Materials, Oxford University, Oxford, 0X1 3PH, Parks Road

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 1990年 / 61卷 / 03期

关键词：

D O I：

10.1080/09500839008206493

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Finnis-Sinclair potentials are developed for computer simulations in which van der Waals type interactions between well separated atomic clusters are as important as the description of metallic bonding at short range. The potentials always favour f.c.c. and h.c.p. structures over the b.c.c. structure. They display convenient scaling properties for both length and energy, and a number of properties of the perfect crystal may be derived analytically. © 1990 Taylor & Francis Group, LLC.

引用

页码：139 / 146

页数：8

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