LOW-THRESHOLD, HIGH-TEMPERATURE PULSED OPERATION OF INGAASP/INP VERTICAL CAVITY SURFACE EMITTING LASERS

被引：32

作者：

WADA, H ^{[1
]}

BABIC, DI ^{[1
]}

CRAWFORD, DL ^{[1
]}

REYNOLDS, TE ^{[1
]}

DUDLEY, JJ ^{[1
]}

BOWERS, JE ^{[1
]}

HU, EL ^{[1
]}

MERZ, JL ^{[1
]}

MILLER, BI ^{[1
]}

KOREN, U ^{[1
]}

YOUNG, MG ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 11期

关键词：

D O I：

10.1109/68.97832

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Room temperature pulsed operation of InGaAsP (1.3-mu-m)/InP vertical cavity surface emitting lasers has been achieved with threshold current as low as 50 mA using a constricted-mesa structure with dielectric mirrors. Above room temperature operation has also been realized for the first time with maximum operation temperature of 66-degrees-C. Pulsed and continuous-wave threshold currents at 77 K are 1.5 and 3.9 mA, respectively. All of these threshold currents are the lowest ever reported for InGaAsP/InP surface emitting lasers at these temperatures.

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页码：977 / 979

页数：3

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