A SINGLE BARRIER VARACTOR QUINTUPLER AT 170 GHZ

被引：19

作者：

RAISANEN, AV

TOLMUNEN, TJ

NATZIC, M

FRERKING, MA

BROWN, E

GRONQVIST, H

NILSEN, SM

机构：

[1] CALTECH,JET PROP LAB,PASADENA,CA 91109

[2] MIT,LINCOLN LAB,LEXINGTON,MA 02173

[3] CHALMERS UNIV TECHNOL,DEPT APPL ELECTRON PHYS,S-41296 GOTHENBURG,SWEDEN

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1995年 / 43卷 / 03期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1109/22.372117

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InGaAs/InAlAs single-barrier varactor (SBV) diodes are tested as frequency quintuplers. The diodes were tested in a crossed-waveguide structure and provided output frequencies between 148 and 187 GHz. The highest observed flange-to-flange efficiency was 0.78% at an output frequency of 172 GHz. This is nearly four times greater than the best quintupler efficiency obtained for previous SBV varactors made from the GaAs/AlGaAs materials system.

引用

页码：685 / 688

页数：4

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