EFFECT OF DISLOCATION DENSITY ON INTEGRATED INTENSITY OF X-RAY-SCATTERING BY SILICON-CRYSTALS IN LAUE GEOMETRY

被引：29

作者：

OLEKHNOVICH, NM

KARPEI, AL

OLEKHNOVICH, AI

PUZENKOVA, LD

机构：

来源：

ACTA CRYSTALLOGRAPHICA SECTION A | 1983年 / 39卷 / JAN期

关键词：

D O I：

10.1107/S0108767383000203

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：116 / 122

页数：7

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