LIQUID-PHASE EPITAXIAL-GROWTH OF IN1-XGAXP1-YASY ON GAAS SUBSTRATES

被引：13

作者：

KANEIWA, S

TAKENAKA, T

YANO, S

HIJIKATA, T

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1983年 / 62卷 / 03期

关键词：

D O I：

10.1016/0022-0248(83)90392-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：498 / 504

页数：7

共 16 条

[1] COMPOSITION STUDIES OF MBE GALNP ALLOYS BY RUTHERFORD SCATTERING AND X-RAY-DIFFRACTION [J].

BLOOD, P ;

BYE, KL ;

ROBERTS, JS .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) :1790-1797

[2]

DECREMOUX B, 1981, I PHYS C SER, V56, P115

[3] LIQUID-PHASE EPITAXIAL-GROWTH AND PHOTOLUMINESCENCE CHARACTERIZATION OF LASER-QUALITY (100) IN1-XGAXP [J].

HITCHENS, WR ;

HOLONYAK, N ;

LEE, MH ;

CAMPBELL, JC .

JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :154-165

[4] DETERMINATION OF LATTICE-CONSTANT OF EPITAXIAL LAYERS OF III-V COMPOUNDS [J].

HORNSTRA, J ;

BARTELS, WJ .

JOURNAL OF CRYSTAL GROWTH, 1978, 44 (05) :513-517

[5] MOLECULAR-BEAM EPITAXIAL-GROWTH OF UNDOPED LOW-RESISTIVITY INXGA1-XP ON GAAS AT HIGH SUBSTRATE TEMPERATURES (500-DEGREES-C-580-DEGREES-C) [J].

KAWAMURA, Y ;

ASAHI, H ;

NAGAI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) :L807-L810

[6] SURFACE DECOMPOSITION OF GAAS SUBSTRATES IN LPE GROWTH OF INGAASP AND ITS EFFECT ON CRYSTAL QUALITY [J].

MUKAI, S ;

YAJIMA, H ;

SHIMADA, J .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (05) :1001-1002

[7] LPE GROWTH OF IN1-XGAXP1-ZASZ (Z LESS THAN OR EQUAL TO 0.01) ON (1 0 0) GAAS SUBSTRATES AND ITS LATTICE-CONSTANTS AND PHOTO-LUMINESCENCE [J].

MUKAI, S ;

MATSUZAKI, M ;

SHIMADA, J .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (02) :321-327

[8]

MUKAI S, 1980, JAPAN J APPL PHYS, V19, pL503

[9] ASYMMETRIC CRACKING IN III-V COMPOUNDS [J].

OLSEN, GH ;

ABRAHAMS, MS ;

ZAMEROWSKI, TJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (12) :1650-1656

[10] EFFECT OF ELASTIC STRAIN ON ENERGY-BAND GAP AND LATTICE-PARAMETER IN III-V-COMPOUNDS [J].

OLSEN, GH ;

NUESE, CJ ;

SMITH, RT .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) :5523-5529

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