PHOTOLUMINESCENCE STUDY OF THE GROWTH OF INDIUM-PHOSPHIDE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：23

作者：

ZHU, LD ^{[1
]}

CHAN, KT ^{[1
]}

WAGNER, DK ^{[1
]}

BALLANTYNE, JM ^{[1
]}

机构：

[1] CORNELL UNIV,SCH APPL & ENGN PHYS,ITHACA,NY 14853

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 12期

关键词：

D O I：

10.1063/1.335460

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5486 / 5492

页数：7

共 28 条

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[7] OMVPE GROWTH OF INP USING TMIN [J].

HSU, CC ;

COHEN, RM ;

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[8] MODULATION DOPED GAAS-GA1-XALXAS HETEROSTRUCTURES GROWN BY ATMOSPHERIC-PRESSURE MOVPE [J].

MALUENDA, J ;

FRIJLINK, PM .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (03) :L127-L129

[9] USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .I. EPITAXIAL GALLIUM-V COMPOUNDS [J].

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SIMPSON, WI .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (12) :1725-+

[10] STRESS EFFECTS ON EXCITONS BOUND TO NEUTRAL ACCEPTORS IN INP [J].

MATHIEU, H ;

CAMASSEL, J ;

CHEKROUN, FB .

PHYSICAL REVIEW B, 1984, 29 (06) :3438-3448

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