ASSESSMENT OF THE IONIZED EL2 FRACTION IN SEMI-INSULATING GAAS

被引：18

作者：

BLAKEMORE, JS ^{[1
]}

SARGENT, L ^{[1
]}

TANG, RS ^{[1
]}

SWIGGARD, EM ^{[1
]}

机构：

[1] SACHS FREEMAN ASSOCIATES,LANDOVER,MD 20785

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 21期

关键词：

D O I：

10.1063/1.101163

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2106 / 2108

页数：3

共 14 条

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[2]

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VONBARDELEBEN, HJ ;

STIEVENARD, D .

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[4] EXPERIMENTAL REQUIREMENTS FOR QUANTITATIVE MAPPING OF MIDGAP FLAW CONCENTRATION IN SEMI-INSULATING GAAS WAFERS BY MEASUREMENT OF NEAR-INFRARED TRANSMITTANCE [J].

DOBRILLA, P ;

BLAKEMORE, JS .

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[5] OPTICAL ASSESSMENT OF THE MAIN ELECTRON TRAP IN BULK SEMI-INSULATING GAAS [J].

MARTIN, GM .

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[6]

MARTIN GM, 1986, DEEP CTR SEMICONDUCT, P339

[7]

SARGENT L, 1988, SEMI-INSULATING III-V MATERIALS, MALMO 1988, P183

[8] TEMPERATURE-DEPENDENCE OF LOCAL VIBRATIONAL-MODE OPTICAL-ABSORPTION FOR CARBON ACCEPTORS IN GAAS [J].

SARGENT, L ;

BLAKEMORE, JS .

APPLIED PHYSICS LETTERS, 1989, 54 (11) :1013-1015

[9] HOLE PHOTOIONIZATION CROSS-SECTIONS OF EL2 IN GAAS [J].

SILVERBERG, P ;

OMLING, P ;

SAMUELSON, L .

APPLIED PHYSICS LETTERS, 1988, 52 (20) :1689-1691

[10] LIQUID ENCAPSULATED VERTICAL ZONE MELT (VZM) GROWTH OF GAAS CRYSTALS [J].

SWIGGARD, EM .

JOURNAL OF CRYSTAL GROWTH, 1989, 94 (02) :556-558

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