THEORY OF FARADAY EFFECT IN ANISOTROPIC SEMICONDUCTORS .2. APPLICATION TO N-TYPE GERMANIUM

被引：25

作者：

DONOVAN, B

WEBSTER, J

机构：

来源：

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON | 1963年 / 81卷 / 519期

关键词：

D O I：

10.1088/0370-1328/81/1/315

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：90 / &

共 10 条

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[5] NOTE ON FARADAY EFFECT IN ANISOTROPIC SEMICONDUCTORS
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[7] CYCLOTRON RESONANCE OF ELECTRONS AND HOLES IN SILICON AND GERMANIUM CRYSTALS
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[8] MICROWAVE FARADAY EFFECT IN SILICON AND GERMANIUM
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[9] CYCLOTRON RESONANCE MEASUREMENTS OF THE ENERGY BAND PARAMETERS OF GERMANIUM
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