PULSE-DOPED ALGAAS/INGAAS PSEUDOMORPHIC MODFETS

被引:6
作者
MOLL, N [1 ]
FISCHERCOLBRIE, A [1 ]
HUESCHEN, M [1 ]
机构
[1] HEWLETT PACKARD LABS,HIGH SPEED DEVICES LAB,PALO ALTO,CA 94304
关键词
D O I
10.1109/T-ED.1987.23249
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:2357 / 2358
页数:2
相关论文
共 2 条
[1]   MICROWAVE PERFORMANCE OF A QUARTER-MICROMETER GATE LOW-NOISE PSEUDOMORPHIC INGAAS/ALGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTOR [J].
HENDERSON, T ;
AKSUN, MI ;
PENG, CK ;
MORKOC, H ;
CHAO, PC ;
SMITH, PM ;
DUH, KHG ;
LESTER, LF .
IEEE ELECTRON DEVICE LETTERS, 1986, 7 (12) :649-651
[2]  
Hueschen M., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P348