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PULSE-DOPED ALGAAS/INGAAS PSEUDOMORPHIC MODFETS
被引:6
作者
:
MOLL, N
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD LABS,HIGH SPEED DEVICES LAB,PALO ALTO,CA 94304
HEWLETT PACKARD LABS,HIGH SPEED DEVICES LAB,PALO ALTO,CA 94304
MOLL, N
[
1
]
FISCHERCOLBRIE, A
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD LABS,HIGH SPEED DEVICES LAB,PALO ALTO,CA 94304
HEWLETT PACKARD LABS,HIGH SPEED DEVICES LAB,PALO ALTO,CA 94304
FISCHERCOLBRIE, A
[
1
]
HUESCHEN, M
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD LABS,HIGH SPEED DEVICES LAB,PALO ALTO,CA 94304
HEWLETT PACKARD LABS,HIGH SPEED DEVICES LAB,PALO ALTO,CA 94304
HUESCHEN, M
[
1
]
机构
:
[1]
HEWLETT PACKARD LABS,HIGH SPEED DEVICES LAB,PALO ALTO,CA 94304
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1987年
/ 34卷
/ 11期
关键词
:
D O I
:
10.1109/T-ED.1987.23249
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:2357 / 2358
页数:2
相关论文
共 2 条
[1]
MICROWAVE PERFORMANCE OF A QUARTER-MICROMETER GATE LOW-NOISE PSEUDOMORPHIC INGAAS/ALGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTOR
[J].
HENDERSON, T
论文数:
0
引用数:
0
h-index:
0
机构:
GE,ELECTR LAB,SYRACUSE,NY 13221
GE,ELECTR LAB,SYRACUSE,NY 13221
HENDERSON, T
;
AKSUN, MI
论文数:
0
引用数:
0
h-index:
0
机构:
GE,ELECTR LAB,SYRACUSE,NY 13221
GE,ELECTR LAB,SYRACUSE,NY 13221
AKSUN, MI
;
PENG, CK
论文数:
0
引用数:
0
h-index:
0
机构:
GE,ELECTR LAB,SYRACUSE,NY 13221
GE,ELECTR LAB,SYRACUSE,NY 13221
PENG, CK
;
MORKOC, H
论文数:
0
引用数:
0
h-index:
0
机构:
GE,ELECTR LAB,SYRACUSE,NY 13221
GE,ELECTR LAB,SYRACUSE,NY 13221
MORKOC, H
;
CHAO, PC
论文数:
0
引用数:
0
h-index:
0
机构:
GE,ELECTR LAB,SYRACUSE,NY 13221
GE,ELECTR LAB,SYRACUSE,NY 13221
CHAO, PC
;
SMITH, PM
论文数:
0
引用数:
0
h-index:
0
机构:
GE,ELECTR LAB,SYRACUSE,NY 13221
GE,ELECTR LAB,SYRACUSE,NY 13221
SMITH, PM
;
DUH, KHG
论文数:
0
引用数:
0
h-index:
0
机构:
GE,ELECTR LAB,SYRACUSE,NY 13221
GE,ELECTR LAB,SYRACUSE,NY 13221
DUH, KHG
;
LESTER, LF
论文数:
0
引用数:
0
h-index:
0
机构:
GE,ELECTR LAB,SYRACUSE,NY 13221
GE,ELECTR LAB,SYRACUSE,NY 13221
LESTER, LF
.
IEEE ELECTRON DEVICE LETTERS,
1986,
7
(12)
:649
-651
[2]
Hueschen M., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P348
←
1
→
共 2 条
[1]
MICROWAVE PERFORMANCE OF A QUARTER-MICROMETER GATE LOW-NOISE PSEUDOMORPHIC INGAAS/ALGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTOR
[J].
HENDERSON, T
论文数:
0
引用数:
0
h-index:
0
机构:
GE,ELECTR LAB,SYRACUSE,NY 13221
GE,ELECTR LAB,SYRACUSE,NY 13221
HENDERSON, T
;
AKSUN, MI
论文数:
0
引用数:
0
h-index:
0
机构:
GE,ELECTR LAB,SYRACUSE,NY 13221
GE,ELECTR LAB,SYRACUSE,NY 13221
AKSUN, MI
;
PENG, CK
论文数:
0
引用数:
0
h-index:
0
机构:
GE,ELECTR LAB,SYRACUSE,NY 13221
GE,ELECTR LAB,SYRACUSE,NY 13221
PENG, CK
;
MORKOC, H
论文数:
0
引用数:
0
h-index:
0
机构:
GE,ELECTR LAB,SYRACUSE,NY 13221
GE,ELECTR LAB,SYRACUSE,NY 13221
MORKOC, H
;
CHAO, PC
论文数:
0
引用数:
0
h-index:
0
机构:
GE,ELECTR LAB,SYRACUSE,NY 13221
GE,ELECTR LAB,SYRACUSE,NY 13221
CHAO, PC
;
SMITH, PM
论文数:
0
引用数:
0
h-index:
0
机构:
GE,ELECTR LAB,SYRACUSE,NY 13221
GE,ELECTR LAB,SYRACUSE,NY 13221
SMITH, PM
;
DUH, KHG
论文数:
0
引用数:
0
h-index:
0
机构:
GE,ELECTR LAB,SYRACUSE,NY 13221
GE,ELECTR LAB,SYRACUSE,NY 13221
DUH, KHG
;
LESTER, LF
论文数:
0
引用数:
0
h-index:
0
机构:
GE,ELECTR LAB,SYRACUSE,NY 13221
GE,ELECTR LAB,SYRACUSE,NY 13221
LESTER, LF
.
IEEE ELECTRON DEVICE LETTERS,
1986,
7
(12)
:649
-651
[2]
Hueschen M., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P348
←
1
→