NARROW CHANNEL-EFFECT ON N-CHANNEL AND P-CHANNEL DEVICES FABRICATED WITH THE SILO AND BOX ISOLATION TECHNIQUES

被引:2
作者
COPPEE, JL [1 ]
FIGUERAS, E [1 ]
GOFFIN, B [1 ]
GLOESENER, D [1 ]
VANDEWIELE, F [1 ]
机构
[1] UNIV AUTONOMA BARCELONA,CSIC,CTR NACL MICROELECTR,E-08193 BELLATERRA,SPAIN
来源
JOURNAL DE PHYSIQUE | 1988年 / 49卷 / C-4期
关键词
D O I
10.1051/jphyscol:19884156
中图分类号
学科分类号
摘要
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页码:749 / 752
页数:4
相关论文
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COPPEE, JL ;
VANDEWIELE, F .
SOLID-STATE ELECTRONICS, 1988, 31 (05) :887-891
[2]  
FIGUERAS E, 1987, 17TH P ESSDERC, P473
[3]  
HUI J, 1982, DEC IEDM, P220
[4]  
SHIBATA T, 1983, IEEE IEDM