INVESTIGATION OF THE SURFACE-STRUCTURE OF GAAS(110) BY HIGH-ENERGY ION CHANNELING

被引：11

作者：

GOSSMANN, HJ

GIBSON, WM

机构：

[1] SUNY ALBANY,DEPT PHYS,ALBANY,NY 12222

[2] SUNY ALBANY,INST PARTICLE SOLID INTERACT,ALBANY,NY 12222

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 03期

关键词：

D O I：

10.1116/1.582820

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：343 / 345

页数：3

共 21 条

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[3]

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[4]

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[6]

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[7] INTRINSIC UNOCCUPIED SURFACE-STATES AT GAAS(110) [J].

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GOSSMANN, HJ ;

STRAUB, D .

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[8] INVESTIGATION OF INTRINSIC UNOCCUPIED SURFACE-STATES AT GAAS(110) BY ISOCHROMAT SPECTROSCOPY [J].

DOSE, V ;

GOSSMANN, HJ ;

STRAUB, D .

PHYSICAL REVIEW LETTERS, 1981, 47 (08) :608-610

[9] DETERMINATION AND APPLICATION OF THE ATOMIC GEOMETRIES OF SOLID-SURFACES [J].

DUKE, CB .

APPLICATIONS OF SURFACE SCIENCE, 1982, 11-2 (JUL) :1-19

[10] THE ATOMIC GEOMETRY OF GAAS(110) REVISITED [J].

DUKE, CB ;

RICHARDSON, SL ;

PATON, A ;

KAHN, A .

SURFACE SCIENCE, 1983, 127 (02) :L135-L143

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