OPTICAL STUDIES OF ELECTRON AND HOLE FERMI SEAS IN A SINGLE GAAS/ALXGA1-XAS QUANTUM-WELL

被引：18

作者：

ANDREWS, SR ^{[1
]}

PLAUT, AS ^{[1
]}

HARLEY, RT ^{[1
]}

KERR, TM ^{[1
]}

机构：

[1] UNIV OXFORD,CLARENDON LAB,OXFORD OX1 3PU,ENGLAND

来源：

PHYSICAL REVIEW B | 1990年 / 41卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.41.5040

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The optical properties of a sample containing several GaAs quantum wells of different widths separated by relatively thick but leaky Al0.3Ga0.7As barriers are investigated at temperatures up to 150 K. Electrical bias, applied using a Schottky gate, tilts the energy bands and results in quasiresonant transfer of electrons or holes, photoexcited in thicker GaAs layers into the quantum wells. This permits investigations under conditions varying from no significant carrier population up to electron or heavy-hole sheet densities of about 2×1011 cm-2 in the same quantum well and provides detailed information on the formation of Mahan excitons, oscillator strengths, and band-gap renormalization. © 1990 The American Physical Society.

引用

页码：5040 / 5047

页数：8

共 30 条

[1]

ANDREWS SR, 1987, P SPIE, V492, P141

[2]

ANDREWS SS, UNPUB

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