BORON-DOPED SI/GE SUPERLATTICES AND HETEROSTRUCTURES

被引：6

作者：

NUTZEL, JF

MEIER, F

FRIESS, E

ABSTREITER, G

机构：

[1] Walter Schottky Institut, Technische München, Universität

来源：

THIN SOLID FILMS | 1992年 / 222卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(92)90057-I

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Boron-doped short per-iod Si(m)Ge(m) (n + m less-than-or-equal-to 20) superlattices, grown by molecular beam epitaxy, show significantly better transport properties than comparable alloys. Their quality is sensitive to the growth temperature. In single Si/Si1-xGex p-type modulation-doped heterostructures, low temperature Hall mobilities of up to 4300 cm2 V-1 s-1 are achieved. We observe clear quantum Hall plateaux and Shubnikov-de Haas oscillations up to a filling factor of 11.

引用

页码：150 / 153

页数：4

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