LARGE-AREA DEPOSITION OF CD1-XZNXTE ON GAAS AND SI SUBSTRATES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：7

作者：

KARAM, NH

SUDHARSANAN, R

MASTROVITO, A

SANFACON, MM

SMITH, FTJ

LEONARD, M

ELMASRY, NA

机构：

[1] LORAL INFRARED & IMAGING SYST,LEXINGTON,MA 02173

[2] N CAROLINA STATE UNIV,RALEIGH,NC 27695

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1995年 / 24卷 / 05期

关键词：

CDZNTE/GAAS; CDZNTE/GAAS/SI; GAAS/SI; CDZNTE; HETEROEPITAXY; HGCDTE; LIQUID PHASE EPITAXY (LPE); METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD);

D O I：

10.1007/BF02657951

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Results of large-area (up to 1000 cm(2)/run) Cd1-xZnxTe heteroepitaxy on both GaAs and GaAs/Si substrates by metalorganic chemical vapor deposition (MOCVD) are presented. Cd1-xZnxTe (x = 0-0.1) films exhibited specular surface morphology, 1% thickness uniformity (standard deviation), and compositional uniformity (Delta x) of +/-0.002 over 100 mm diam substrates. For selected substrate orientations and deposition conditions, the only planar defects exhibited by (111)B Cd1-xZnxTe/GaAs/Si films were lamella twins parallel to the CdTe/GaAs interface; these do not propagate through either the Cd Zn Te layer or subsequently deposited liquid phase epitaxy (LPE) HgCdTe layer(s). Background Ga and As-impurity levels for Cd1-xZnxTe on GaAs/Si substrates were below the secondary ion mass spectroscopy detection limit. Preliminary results of HgCdTe liquid phase epitaxy using a Te-rich melt on Si-based substrates resulted in xray rocking curve linewidths as narrow as 72 are-sec and etch-pit densities in the range 1 to 3 x 10(6) cm(2).

引用

页码：483 / 489

页数：7

共 15 条

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