TRANSIENT PHOTOCONDUCTIVITY AND PHOTOINDUCED OPTICAL-ABSORPTION IN AMORPHOUS-SEMICONDUCTORS

被引：217

作者：

ORENSTEIN, J

KASTNER, MA

VANINOV, V

机构：

[1] MIT,DEPT PHYS,CAMBRIDGE,MA 02139

[2] MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1982年 / 46卷 / 01期

关键词：

D O I：

10.1080/13642818208246421

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：23 / 62

页数：40

共 23 条

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[8] NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP
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[J]. PHYSICAL REVIEW B, 1977, 15 (02): : 989 - 1016
[9] DISPERSIVE TRANSPORT AND RECOMBINATION LIFETIME IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON
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[J]. PHYSICAL REVIEW LETTERS, 1981, 46 (05) : 371 - 374
[10] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS
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[J]. PHYSICAL REVIEW LETTERS, 1976, 37 (22) : 1504 - 1507

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