GALVANOMAGNETIC PROPERTIES OF PURE HGTE UNDER HIGH HYDROSTATIC-PRESSURE

被引:33
作者
STANKIEWICZ, J [1 ]
GIRIAT, W [1 ]
机构
[1] UNIV LOS ANDES, DEPT FIS, MERIDA, VENEZUELA
关键词
D O I
10.1103/PhysRevB.13.665
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
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页码:665 / 672
页数:8
相关论文
共 37 条
[1]  
[Anonymous], 1966, SEMICONDUCTORS SEMIM
[2]  
BASTARD G, COMMUNICATION
[3]  
BASTARD G, 1974, 12TH P INT C PHYS SE, P1162
[4]  
BEER AC, 1963, SOLID STATE PHYSI S4
[5]  
BROERMAN JG, 1972, 11TH P INT C PHYS SE, P917
[6]   GALVANOMAGNETIC PROPERTIES OF HGTE IN STRONG MAGNETIC-FIELDS [J].
DZIUBA, EZ .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1974, 62 (01) :307-312
[7]   PRESSURE-DEPENDENCE OF CARRIER CONCENTRATIONS IN P-TYPE ALLOYS OF HG1-XCDXTE AT 4.2 AND 77 DEGREES K [J].
ELLIOTT, CT ;
MELNGAIL.J ;
HARMAN, TC ;
KAFALAS, JA ;
KERNAN, WC .
PHYSICAL REVIEW B, 1972, 5 (08) :2985-&
[8]  
FINK C, 1972, 11 P INT C PHYS SEM, P944
[9]   TEMPERATURE DEPENDENCE OF INTRINSIC CONCENTRATION IN HGTE [J].
GALAZKA, RR .
PHYSICS LETTERS A, 1970, A 32 (02) :101-&
[10]  
Gel'mont B. L., 1972, Soviet Physics - JETP, V35, P377