GROWTH AND CHARACTERIZATION OF GAAS-LAYERS ON SI SUBSTRATES BY MIGRATION-ENHANCED MOLECULAR-BEAM EPITAXY

被引：14

作者：

KIM, JH

LIU, JK

RADHAKRISHNAN, G

KATZ, J

SAKAI, S

CHANG, SS

ELMASRY, NA

机构：

[1] UNIV FLORIDA,DEPT ELECT ENGN,GAINESVILLE,FL 32611

[2] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 24期

关键词：

D O I：

10.1063/1.100212

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2435 / 2437

页数：3

共 15 条

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[2] LOW-THRESHOLD GAAS/ALGAAS LASERS GROWN ON SI BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

CHOI, HK ;

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FAN, JCC .

APPLIED PHYSICS LETTERS, 1988, 52 (14) :1114-1115

[3] ROOM-TEMPERATURE CONTINUOUS OPERATION OF P-N ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURE LASERS GROWN ON SI [J].

DEPPE, DG ;

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MATYI, RJ ;

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EPLER, JE ;

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APPLIED PHYSICS LETTERS, 1987, 51 (09) :637-639

[4] GROWTH AND PROPERTIES OF GAAS/ALGAAS ON NONPOLAR SUBSTRATES USING MOLECULAR-BEAM EPITAXY [J].

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MCGLINN, TC ;

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[5]

HORIKOSHI H, 1988, JPN J APPL PHYS, V27, P169

[6] LOW-TEMPERATURE GROWTH OF GAAS AND ALAS-GAAS QUANTUM-WELL LAYERS BY MODIFIED MOLECULAR-BEAM EPITAXY [J].

HORIKOSHI, Y ;

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YAMAGUCHI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (10) :L868-L870

[7] MIGRATION-ENHANCED EPITAXY OF GAAS AND ALGAAS [J].

HORIKOSHI, Y ;

KAWASHIMA, M ;

YAMAGUCHI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1988, 27 (02) :169-179

[8] HIGH-PEAK-POWER LOW-THRESHOLD ALGAAS/GAAS STRIPE LASER-DIODES ON SI SUBSTRATES GROWN BY MIGRATION-ENHANCED MOLECULAR-BEAM EPITAXY [J].

KIM, JH ;

NOUHI, A ;

RADHAKRISHNAN, G ;

LIU, JK ;

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APPLIED PHYSICS LETTERS, 1988, 53 (14) :1248-1250

[9]

KIM JH, 1988, SPIE P, V945, P155

[10] AL0.3GA0.7AS/AL0.05GA0.95AS LIGHT-EMITTING-DIODES ON GAAS-COATED SI SUBSTRATES GROWN BY LIQUID-PHASE EPITAXY [J].

SAKAI, S ;

CHANG, SS ;

RAMASWAMY, RV ;

KIM, JH ;

RADHAKRISHNAN, G ;

LIU, JK ;

KATZ, J .

APPLIED PHYSICS LETTERS, 1988, 53 (13) :1201-1203

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